BUZ380 datasheet(7/9 Pages) SIEMENS

Il numero della parte	BUZ380

Spiegazioni elettronici	SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

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Produttore elettronici	SIEMENS [Siemens Semiconductor Group]

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7 / 9 page

7

07/96

Semiconductor Group

BUZ 380

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter:

V

GS = VDS, ID = 1 mA

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

V

4.6

V

GS(th)

-60

-20

20

60

100

°C

160

T

j

2%

typ

98%

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter:

ID = 3.5 A, VGS = 10 V

-60

-20

20

60

100

°C

160

T

j

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

Ω

6.5

R

DS (on)

typ

98%

Typ. capacitances

C = f (VDS)

parameter:

VGS = 0V, f = 1MHz

0

5

10

15

20

25

30

V

40

V

DS

-2

10

-1

10

0

10

1

10

nF

C

rss

C

oss

C

iss

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter:

Tj, tp = 80 µs

-1

10

0

10

1

10

2

10

A

I

F

0.0

0.4

0.8

1.2

1.6

2.0

2.4

V

3.0

V

SD

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

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