BUZ342 datasheet(5/9 Pages) SIEMENS

Il numero della parte	BUZ342

Spiegazioni elettronici	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance)

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Produttore elettronici	SIEMENS [Siemens Semiconductor Group]

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5 / 9 page

5

07/96

Semiconductor Group

BUZ 342

Drain current

ID = ƒ(TC)

parameter:

V

GS ≥ 10 V

0

20

40

60

80

100

120

140

°C

180

T

C

0

5

10

15

20

25

30

35

40

45

50

55

A

65

I

D

Power dissipation

Ptot = ƒ(TC)

0

20

40

60

80

100

120

140

°C

180

T

C

0

50

100

150

200

250

300

350

W

450

P

tot

Safe operating area

I

D = ƒ(VDS)

parameter:

D = 0.01, T

C = 25°C

0

10

1

10

2

10

3

10

A

I

D

10

0

10

1

10

2

V

DS

R DS(on)

=

V DS

/

I D

DC

10 ms

1 ms

100 µs

t

p

= 47.0µs

Transient thermal impedance

Z

th JC = ƒ(tp)

parameter:

D = t

p / T

-3

10

-2

10

-1

10

0

10

K/W

Z

thJC

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

s

t

p

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

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Descrizione simile - BUZ342

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Siemens Semiconductor G...	BUZ104	208Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
	BUZ101	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
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BUZ342 Scheda tecnica(PDF) 5 Page - Siemens Semiconductor Group

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