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BUZ12 Scheda tecnica(PDF) 3 Page - Siemens Semiconductor Group |
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BUZ12 Scheda tecnica(HTML) 3 Page - Siemens Semiconductor Group |
3 / 9 page Semiconductor Group 3 07/96 BUZ 12 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 32 A gfs 12 23 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 1700 2300 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 800 1200 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 280 420 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(on) - 35 50 ns Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr - 85 130 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) - 220 280 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf - 140 180 |
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