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BUZ101SL Scheda tecnica(PDF) 3 Page - Siemens Semiconductor Group |
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BUZ101SL Scheda tecnica(HTML) 3 Page - Siemens Semiconductor Group |
3 / 8 page Semiconductor Group 3 29/Jan/1998 BUZ 101 SL SPP20N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 14 A gfs 7 14 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 560 700 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 170 215 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 95 120 Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω td(on) - 15 25 ns Rise time VDD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω tr - 35 55 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω td(off) - 15 25 Fall time VDD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω tf - 15 25 Gate charge at threshold VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V Qg(th) - 0.8 1.2 nC Gate charge at 5.0 V VDD = 40 V, ID = 20 A, VGS =0 to 5 V Qg(5) - 15 23 Gate charge total VDD = 40 V, ID = 20 A, VGS =0 to 10 V Qg(total) - 24 36 Gate plateau voltage VDD = 40 V, ID = 20 A V(plateau) - 4.06 - V |
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