BUZ101SL-4 datasheet(2/8 Pages) SIEMENS

Il numero della parte	BUZ101SL-4

Spiegazioni elettronici	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

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Produttore elettronici	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

2

02/Oct/1997

BUZ 101SL-4

Preliminary data

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Thermal resistance, junction - soldering point 1)

RthJS

-

tbd

K/W

Thermal resistance, junction - ambient 2)

RthJA

-

62.5

1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for

Drain connection. PCB is vertical without blown air.

2) one channel active

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

V(BR)DSS

55

-

V

Gate threshold voltage

VGS=VDS, ID = 30 µA

VGS(th)

1.2

1.6

2

Zero gate voltage drain current

VDS = 55 V, VGS = 0 V, Tj = -40 °C

VDS = 55 V, VGS = 0 V, Tj = 25 °C

VDS = 55 V, VGS = 0 V, Tj = 150 °C

IDSS

-

0.1

-

100

1

0.1

µA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

IGSS

-

10

100

nA

Drain-Source on-resistance

VGS = 5 V, ID = 4.1 A

RDS(on)

-

0.06

0.075

Ω

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