BUZ101SL-4 datasheet(8/8 Pages) SIEMENS

Il numero della parte	BUZ101SL-4

Spiegazioni elettronici	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

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Produttore elettronici	SIEMENS [Siemens Semiconductor Group]

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8 / 8 page

Semiconductor Group

8

02/Oct/1997

Preliminary data

BUZ 101SL-4

Typ. gate charge

V

GS = ƒ(QGate)

parameter: ID puls = 4 A

0

4

8

12

16

20

24

28 nC 34

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Avalanche energy EAS = f (Tj)

parameter:ID=4.1A,VDD =25 V

RGS =25 Ω , L = 10.7mH

20

40

60

80

100

120

140

°C

180

T

j

0

10

20

30

40

50

60

70

80

mJ

100

E

AS

Drain-source breakdown voltage

V

(BR)DSS = ƒ(Tj)

-60

-20

20

60

100

°C

180

T

j

49

51

53

55

57

59

61

V

65

V

(BR)DSS

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