2N3767 datasheet(1/2 Pages) CENTRAL

Il numero della parte	2N3767

Spiegazioni elettronici	NPN SILICON POWER TRANSISTOR

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Produttore elettronici	CENTRAL [Central Semiconductor Corp]

Homepage	http://www.centralsemi.com

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MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

2N3766

2N3767

UNITS

Collector-Base Voltage

VCBO

80

100

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

4.0

A

Base Current

IB

2.0

A

Power Dissipation

PD

25

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJC

7.0

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEV

VCE=Rated VCBO, VBE=1.5V

10

μA

ICBO

VCB=Rated VCBO

10

μA

ICEO

VCE=Rated VCEO

500

μA

IEBO

VEB=6.0V

500

μA

BVCEO

IC=100mA (2N3766)

60

V

BVCEO

IC=100mA (2N3767)

80

V

VCE(SAT)

IC=500mA, IB=50mA

1.0

V

VCE(SAT)

IC=1.0A, IB=100mA

2.5

V

VBE(ON)

VCE=10V, IC=1.0A

1.5

V

hFE

VCE=5.0V, IC=50mA

30

hFE

VCE=5.0V, IC=500mA

40

160

hFE

VCE=10V, IC=1.0A

20

fT

VCE=10V, IC=500mA, f=10MHz

10

MHz

Cob

VCB=10V, IC=0, f=100KHz

50

pF

2N3766

2N3767

NPN SILICON

POWER TRANSISTOR

TO-66 CASE

Central

Semiconductor Corp.

TM

R1 (25-October 2007))

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types

are silicon NPN power transistors manufactured by the

epitaxial base process designed for power amplifier and

medium speed switching applications.

MARKING CODE: FULL PART NUMBER

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