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FQP12N60 Scheda tecnica(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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FQP12N60 Scheda tecnica(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 1 page TO-220 Parameter Symbol Value Unit Drain-Source Voltage VDSS 600 V Drain Current - Continuous ID 10.5 A Drain Current - Pulsed IDM 42 A Gate-Source Voltage VGSS ±30 V Power Dissipation PD 180 W Max. Operating Junction Temperature Tj 150 oC Storage Temperature Tstg -55~150 oC FQP12N60 DESCRIPTION Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID =250μA 600 — — V Zero Gate Voltage Drain Current IDSS VDS =600V, VGS =0V — — 1.0 uA Gate-Body Leakage Current, Forward IGSSF VGS =30V, VDS =0V — — 100 nA Gate-Body Leakage Current, Reverse IGSSR VGS = -30V, VDS =0V — — -100 nA Gate Threshold Voltage VGS(th) VDS = VGS , ID =250μA 2.0 — 4.0 V Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 5.3 A — 0.55 0.7 W Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 10.5 A — — 1.4 V 600V N-Channel MOSFET Product specification ’ These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) O ( Ta = 25 C) O TIGER ELECTRONIC CO.,LTD |
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