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MMBD7000-V-G Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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MMBD7000-V-G Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 3 page www.vishay.com 2 Document Number 85873 Rev. 1.0, 13-May-11 MMBD7000-V-G Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Device on alumina substrate 2) On FR-5 board Electrical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in millimeters (inches): SOT-23 Parameter Test condition Symbol Value Unit Typical thermal resistance, junction to ambient air RthJA 417 1) K/W RthJA 556 2) K/W Maximum junction temperature Tj 150 °C Storage temperature range Tstg - 55 to + 150 °C Parameter Test condition Symbol Min. Typ. Max. Unit Reverse breakdown voltage IR = 100 AV(BR) 100 V Leakage current VR = 50 V IR 1 A VR = 100 V IR 3 A VR = 50 V, Tj = 125 ° C IR 100 A Forward voltage IF = 1 mA VF 0.55 0.70 V IF = 10 mA VF 0.67 0.82 V IF = 100 mA VF 0.75 1.10 V Diode capacitance VR = 0, f = 1 MHz CD 1.5 pF Reverse recovery time IF = 10 mA to IR = 10 mA, Irr = 1 mA, RL = 100 Irr 4ns Foot print recommendation: Rev. 8 - Date: 23.Sept.2009 17418 Document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 2.35 (0.093) 2.6 (0.102) 0.95 (0.037) 0.95 (0.037) 0.7 (0.028) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.) |
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