Micro-X1

Semiconductor Group

1

Draft A03 1998-04-01

HiRel NPN Silicon RF Transistor

BFY 196

Features

¥ HiRel Discrete and Microwave Semiconductor

¥ For low noise, high gain amplifiers up to 2 GHz.

¥ For linear broadband amplifiers

¥ Hermetically sealed microwave package

¥

f

¥ ESA Qualification pending

ESD: Electrostatic discharge sensitive device, observe handling precautions!

(ql) Quality Level: P: Professional Quality,

Ordering Code: Q62702F1684

H: High Rel Quality,

Ordering Code: on request

S: Space Quality,

Ordering Code: on request

(see Chapter Order Instructions for ordering example)

1)

The maximum permissible base current for

V

Type

Marking

Ordering Code

Pin Configuration

Package

BFY 196 (ql)

-

see below

C

E

B

E

Micro-X1

Table 1

Maximum Ratings

Parameter

Symbol

Limit Values

Unit

Collector-emitter voltage

V

CEO

12

V

Collector-emitter voltage,

V

V

CES

20

V

Collector-base voltage

V

CBO

20

V

Emitter-base voltage

V

EBO

2V

Collector current

I

C

100

mA

Base current

I

B

12

1)

mA

Total power dissipation,

T

2)

P

tot

700

mW

Junction temperature

T

j

200

°C

Operating temperature range

T

op

- 65 É + 200

°C

Storage temperature range

T

stg

- 65 É + 200

°C

Thermal Resistance

Junction soldering point

2)

R

th JS

< 135

K/W