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BC847S Scheda tecnica(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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BC847S Scheda tecnica(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
1 / 2 page BC847S Multi-chip transistor (NPN) APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 200 mA PD Power Dissipation 200 mW RθJA Thermal Resistance. Junction to Ambient 625 ℃/W Tj Junction Temperature 150 Tstg Storage Temperature Range -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 Emitter cut-off current IEBO VEB =4V , IC=0 15 nA DC current gain* hFE VCE=5V,IC=2mA 110 630 VCE(sat)(1) IC=10mA,IB=0.5mA 0.25 V Collector-emitter saturation voltage VCE(sat)(2) IC=100mA,IB=5mA 0.65 V VBE(1) VCE=5V,IC=2mA 0.58 0.7 V Base-emitter voltage VBE(2) VCE=5V,IC=10mA 0.77 V Transition frequency fT VCE=5V,IC=20mA ,f=100MHz 200 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 2 pF *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. SOT-363 E1 B1 C2 C1 B2 E2 www.htsemi.com semiconductor JinYu 1 Date:2011/ 05 |
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