2SA1579 datasheet(1/2 Pages) HTSEMI

Il numero della parte	2SA1579

Spiegazioni elettronici	TRANSISTOR(PNP)

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TRANSISTOR(PNP)

FEATURES

High breakdown voltage. (BVCEO = -120V)

Complements the 2SC4102

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-50μA,IE=0

-120

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

-120

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-50μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-100V,IE=0

-0.5

μ

A

Emitter cut-off current

IEBO

VEB=-4V,IC=0

-0.5

μ

A

DC current gain

hFE

VCE=-6V,IC=-2mA

180

560

Collector-emitter saturation voltage

VCE(sat)

IC=-10mA,IB=-1mA

-0.5

V

Transition frequency

fT

VCE=-12V,IC=-2mA,f=30MHz

140

MHz

Collector output capacitance

Cob

VCB=-12V,IE=0,f=1MHz

3.2

pF

CLASSIFICATION OF

hFE

Rank

R

S

Range

180-390

270-560

Marking

RR

RS

Symbol

Parameter

Value

Units

VCBO

Collector- Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-50

mA

PC

Collector Dissipation

100

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

SOT-323

1. BASE

2. EMITTER

3. COLLECTOR

2SA1 57 9

Ｄａｔｅ：２０１１／０５

１　

Ｄａｔｅ：２０１１／０５

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