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BF569 Scheda tecnica(PDF) 2 Page - Siemens Semiconductor Group |
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BF569 Scheda tecnica(HTML) 2 Page - Siemens Semiconductor Group |
2 / 3 page Semiconductor Group 2 BF 569 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Unit Values Parameter Symbol min. typ. max. DC Characteristics AC Characteristics V Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR) CE0 35 – – nA Collector cutoff current VCB = 20 V, IE = 0 ICB0 – – 100 – DC current gain IC = 3 mA, VCE = 10 V hFE 20 50 – MHz Transition frequency IC = 3 mA, VCE = 10 V, f = 100 MHz fT – 950 – pF Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Ccb – 0.32 – Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Cce – 0.15 – Common base power gain IC = 3 mA, VCB = 10 V, f = 800 MHz RL = 500 Ω Gp – 14.8 – dB Noise figure IC = 3 mA, VCB = 10 V, f = 800 MHz RS = 60 Ω F – 4.5 – |
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