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BC847PN Scheda tecnica(PDF) 1 Page - Siemens Semiconductor Group |
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BC847PN Scheda tecnica(HTML) 1 Page - Siemens Semiconductor Group |
1 / 6 page BC 847PN Semiconductor Group May-12-1998 1 NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistors in one package Tape loading orientation PIN Configuration 1 = E 2 = B NPN-Transistor 6 = C PNP-Transistor 4 = E 5 = B 3 = C Type Marking Package Ordering Code Q62702-C2374 SOT-363 BC 847PN 1Ps Maximum Ratings Parameter Value Symbol Unit V Collector-emitter voltage VCEO 45 Collector-base voltage 50 VCBO Collector-emitter voltage VCES 50 VEBO Emitter-base voltage 5 mA DC collector current IC 100 200 Peak collector current ICM Total power dissipation, TS = 115 °C mW Ptot 250 Tj 150 Junction temperature °C -65...+150 Storage temperature Tstg Thermal Resistance Junction ambient 1) RthJA ≤275 K/W Junction - soldering point RthJS ≤140 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu |
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