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TP0202K-T1-GE3 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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TP0202K-T1-GE3 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model TP0202K SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 2.1 2 V On-State Drain Current a ID(on) VDS = −10 V, VGS = −10 V 4 A VGS = −10 V, ID = −0.5 A 2 2.1 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, ID = −0.05 A 1.3 1.25 Ω Forward Transconductance a gfs VDS = −5 V, ID = −0.2 A 283 315 mS Diode Forward Voltage a VSD IS = −0.25 A, VGS = 0 V −0.76 V Dynamic b Total Gate Charge Qg 704 1000 Gate-Source Charge Qgs 225 225 Gate-Drain Charge Qgd VDS = −16 V, VGS = −10 V, ID = −0.2 A 175 175 pC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 73186 S-52635 Rev. B, 02-Jan-06 |
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