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SS12P4S Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SS12P4S Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 89127 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 17-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 21 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS12P4S Vishay General Semiconductor New Product Fig. 2 - Forward Power Loss Characteristics Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance 0 1 2 3 4 5 6 7 024 6 8 10 12 14 D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 Average Forward Current (A) D = t p/T t p T 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.7 T A = 150 °C T A = 125 °C T A = 25 °C Instantaneous Forward Voltage (V) 0.6 0.001 0.1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) T A = 125 °C T A = 25 °C 0.01 T A = 150 °C 100 1000 10 000 0.1 1 10 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p |
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