SIZ728DT-T1-GE3 datasheet(4/14 Pages) VISHAY

Il numero della parte	SIZ728DT-T1-GE3

Spiegazioni elettronici	N-Channel 25 V (D-S) MOSFETs

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Document Number: 67694

S11-0608-Rev. A, 04-Apr-11

Vishay Siliconix

SiZ728DT

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

50

60

70

0.0

0.5

1.0

1.5

2.0

V

DS - Drain-to-Source Voltage (V)

V

GS = 4 V

V

GS = 10 V thru 5 V

V

GS = 3 V

0.0040

0.0060

0.0080

0.0100

0.0120

0.0140

0.0160

0

10

20

30

40

50

60

70

I

D -Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

0

2

4

6

8

10

0

3

6

9

12

15

18

Q

g - Total Gate Charge (nC)

V

DS = 24 V

V

DS = 7.5 V

I

D = 20 A

V

DS = 15 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V

GS - Gate-to-Source Voltage (V)

T

C = 125 °C

T

C = - 55 °C

T= 25 C

°

C

0

200

400

600

800

1000

1200

0

5

10

15

20

25

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

I

D = 18 A

V

GS = 4.5 V

V

GS = 10 V

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