SIZ300DT-T1-GE3 datasheet(10/14 Pages) VISHAY

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Il numero della parte	SIZ300DT-T1-GE3

Spiegazioni elettronici	Dual N-Channel 30 V (D-S) MOSFETs

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Document Number: 67715

S11-1646-Rev. B, 15-Aug-11

Vishay Siliconix

SiZ300DT

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

100

125

150

C - Case Temperature (°C)

Package Limited

Power, Junction-to-Case

100

125

150

C - Case Temperature (°C)

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