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SI7980DP-T1-E3 Scheda tecnica(PDF) 11 Page - Vishay Siliconix

Il numero della parte SI7980DP-T1-E3
Spiegazioni elettronici  Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Document Number: 68391
S-83039-Rev. C, 29-Dec-08
www.vishay.com
11
Vishay Siliconix
Si7980DP
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68391.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3
10-2
1
10
1000
10-1
10-4
100
0.2
0.1
0.05
Square WavePulse Duration (s)
1
0.1
0.01
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 83°C/W
3. TJM -TA =PDMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Case
10-4
10-3
1
10
10-2
10-5
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
1
0.1
0.01
Single Pulse
0.02
0.05
-1


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