SI7858BDP datasheet(3/13 Pages) VISHAY

Il numero della parte	SI7858BDP

Spiegazioni elettronici	N-Channel 12 V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 66589

S10-1045-Rev. A, 03-May-10

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Vishay Siliconix

Si7858BDP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

14

28

42

56

70

0.0

0.5

1.0

1.5

2.0

2.5

VGS =5Vthru 1.5V

VGS =1 V

VDS - Drain-to-Source Voltage (V)

0.0018

0.0022

0.0026

0.0030

0.0034

0.0038

0

14284256

70

VGS =1.8 V

VGS =2.5 V

VGS =4.5 V

ID - Drain Current (A)

0.0

1.6

3.2

4.8

6.4

8.0

0

20

40

60

80

100

ID =10A

VDS =8V

VDS =6V

VDS =4V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

0.0

0.3

0.6

0.9

1.2

1.5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

0

1600

3200

4800

6400

8000

0.0

2.4

4.8

7.2

9.6

12.0

Ciss

Coss

Crss

VDS - Drain-to-Source Voltage (V)

0.7

0.9

1.1

1.3

1.5

- 50

- 25

0

25

50

75

100

125

150

ID =15A

VGS =2.5 V

VGS =4.5 V

TJ - Junction Temperature (°C)

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