SI7720DN-T1-GE3 datasheet(1/14 Pages) VISHAY

Il numero della parte	SI7720DN-T1-GE3

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7720DN

Document Number: 68787

S-81716-Rev. A, 04-Aug-08

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

•

Halogen-free

•

SkyFET™ Monolithic TrenchFET® Power

MOSFET and Schottky Diode

•

Low Thermal Resistance PowerPAK® Package

with Small Size and Low 1.07 mm Profile

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

Notebook PC

- System Power

•

Buck Converter

•

Synchronous Rectifier Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

e

Qg (Typ.)

30

0.0125 at VGS = 10 V

12

13.7 nC

0.015 at VGS = 4.5 V

12

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7720DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

S

D

Schottky Diode

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Package limited.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

12e

A

TC = 70 °C

12e

TA = 25 °C

12a, b

TA = 70 °C

10a, b

Pulsed Drain Current

IDM

50

Continuous Source-Drain Diode Current

TC = 25 °C

IS

12e

TA = 25 °C

3.4a, b

Single Pulse Avalanche Current

L = 0.1 mH

IAS

20

Single Pulse Avalanche Energy

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

PD

52

W

TC = 70 °C

33

TA = 25 °C

3.8a, b

TA = 70 °C

2.4a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 50 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

RoHS

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