www.vishay.com

2

Document Number: 71911

S09-0227-Rev. F, 09-Feb-09

Vishay Siliconix

Si7540DP

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

N-Ch

0.6

1.5

V

P-Ch

- 0.6

- 1.5

Gate-Body Leakage

N-Ch

± 100

nA

P-Ch

± 100

Zero Gate Voltage Drain Current

N-Ch

1

µA

P-Ch

- 1

N-Ch

5

P-Ch

- 5

N-Ch

20

A

P-Ch

- 20

N-Ch

0.014

0.017

Ω

P-Ch

0.026

0.032

N-Ch

0.020

0.025

P-Ch

0.043

0.053

N-Ch

32

S

P-Ch

23

N-Ch

0.77

1.2

V

P-Ch

- 0.8

- 1.2

Total Gate Charge

N-Channel

P-Channel

N-Ch

11.5

17

nC

P-Ch

13

20

Gate-Source Charge

N-Ch

3.2

P-Ch

4.1

Gate-Drain Charge

N-Ch

2.5

P-Ch

1.9

Gate Resistance

N-Ch

0.5

1.7

2.5

Ω

P-Ch

1.5

3.5

5.6

Turn-On Delay Time

N-Channel

P-Channel

N-Ch

30

45

ns

P-Ch

35

55

Rise Time

N-Ch

50

75

P-Ch

42

65

Turn-Off Delay Time

N-Ch

60

90

P-Ch

54

85

Fall Time

N-Ch

25

40

P-Ch

17

30

Source-Drain Reverse Recovery

Time

N-Ch

40

80

P-Ch

40

80