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SI7461DP Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI7461DP Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si7461DP SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 1.9 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −10 V 442 A VGS = −10 V, ID = −14.4 A 0.011 0.0115 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, ID = −12.6 A 0.014 0.015 Ω Forward Transconductance a gfs VDS = −15 V, ID = −14.4 A 45 31 S Diode Forward Voltage a VSD IS = −4.5 A, VGS = 0 V −0.84 −0.80 V Dynamic b Total Gate Charge Qg 117 127 Gate-Source Charge Qgs 20 20 Gate-Drain Charge Qgd VDS = −30 V, VGS = −10 V, ID = −14.4 A 54 54 nC Turn-On Delay Time td(on) 22 20 Rise Time tr 21 20 Turn-Off Delay Time td(off) 192 205 Fall Time tf VDD = −30 V, RL = 30 Ω ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω 68 190 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72624 S-52519 Rev. B, 12-Dec-05 |
Codice articolo simile - SI7461DP_05 |
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Descrizione simile - SI7461DP_05 |
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