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SI7414DN-T1-E3 Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI7414DN-T1-E3 Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 11 page Document Number: 71738 S-83043-Rev. D, 22-Dec-08 www.vishay.com 3 Vishay Siliconix Si7414DN TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 4 8 12 16 VDS = 30 V ID = 8.7 A Qg - Total Gate Charge (nC) VSD - Source-to-Drain Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 30 10 1 TJ = 25 °C TJ = 150 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 200 400 600 800 1000 1200 0 102030 405060 Coss Ciss VDS - Drain-to-Source Voltage (V) Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 8.7 A TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0 2468 10 ID = 8.7 A |
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