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SI7236DP-T1-GE3 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI7236DP-T1-GE3 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 70359 S09-0222-Rev. B, 09-Feb-09 Vishay Siliconix Si7236DP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 19 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 4.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.6 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 20.7 A 0.042 0.0052 Ω VGS = 2.5 V, ID = 17.9 A 0.0056 0.007 Forward Transconductancea gfs VDS = 10 V, ID = 20.7 A 120 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 4000 pF Output Capacitance Coss 650 Reverse Transfer Capacitance Crss 300 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 20 A 68 105 nC VDS = 10 V, VGS = 4.5 V, ID = 20 A 31 47 Gate-Source Charge Qgs 7.5 Gate-Drain Charge Qgd 5 Gate Resistance Rg f = 1 MHz 3.5 Ω Turn-on Delay Time td(on) VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 30 45 ns Rise Time tr 100 150 Turn-Off Delay Time td(off) 80 120 Fall Time tf 22 35 Turn-on Delay Time td(on) VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 10 15 Rise Time tr 15 25 Turn-Off Delay Time td(off) 60 90 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 60 A Pulse Diode Forward Current ISM 80 Body Diode Voltage VSD IS = 10 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 40 80ns Body Diode Reverse Recovery Charge Qrr 30 60 nC Reverse Recovery Fall Time ta 19 ns Reverse Recovery Rise Time tb 21 |
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