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Document Number: 69257

S09-0271-Rev. B, 16-Feb-09

Vishay Siliconix

Si7186DP

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

80

V

ΔV

90

mV/°C

ΔV

- 11

Gate-Source Threshold Voltage

2.5

4.5

V

Gate-Source Leakage

± 100

nA

Zero Gate Voltage Drain Current

1

µA

10

30

A

0.0103

0.0125

Ω

18

S

Input Capacitance

2840

pF

Output Capacitance

325

Reverse Transfer Capacitance

120

Total Gate Charge

46

70

nC

Gate-Source Charge

15

Gate-Drain Charge

13

Gate Resistance

f = 1 MHz

0.8

1.6

Ω

Turn-On Delay Time

18

35

ns

Rise Time

10

20

Turn-Off Delay Time

24

45

Fall Time

816

Turn-On Delay Time

25

50

Rise Time

11

22

Turn-Off Delay Time

32

60

Fall Time

10

20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

32

A

60

Body Diode Voltage

0.78

1.2

V

Body Diode Reverse Recovery Time

58

90

ns

Body Diode Reverse Recovery Charge

145

230

nC

Reverse Recovery Fall Time

43

ns

Reverse Recovery Rise Time

15