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SI7174DP-T1-GE3 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI7174DP-T1-GE3 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 69975 S-80787-Rev. A, 14-Apr-08 Vishay Siliconix Si7174DP New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 75 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 76 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 11 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 2.5 4.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 75 V, VGS = 0 V 1 µA VDS = 75 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V 40 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 10 A 0.0057 0.007 Ω Forward Transconductancea gfs VDS = 15 V, ID = 10 A 34 S Dynamicb Input Capacitance Ciss VDS = 40 V, VGS = 0 V, f = 1 MHz 2770 pF Output Capacitance Coss 345 Reverse Transfer Capacitance Crss 140 Total Gate Charge Qg VDS = 40 V, VGS = 10 V, ID = 10 A 47.5 72 nC Gate-Source Charge Qgs 13.8 Gate-Drain Charge Qgd 14.4 Gate Resistance Rg f = 1 MHz 0.3 1.2 2.4 Ω Turn-On Delay Time td(on) VDD = 40 V, RL = 10 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 16 30 ns Rise Time tr 11 22 Turn-Off Delay Time td(off) 28 50 Fall Time tf 918 Turn-On Delay Time td(on) VDD = 40 V, RL = 10 Ω ID ≅ 10 A, VGEN = 8 V, Rg = 6 Ω 21 40 Rise Time tr 11 22 Turn-Off Delay Time td(off) 38 70 Fall Time tf 12 24 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 60 A Pulse Diode Forward Currenta ISM 80 Body Diode Voltage VSD IS = 4 A 0.75 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 47 95 ns Body Diode Reverse Recovery Charge Qrr 103 210 nC Reverse Recovery Fall Time ta 36 ns Reverse Recovery Rise Time tb 11 |
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