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SI7174DP-T1-GE3 Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte SI7174DP-T1-GE3
Spiegazioni elettronici  N-Channel 75-V (D-S) MOSFET
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Document Number: 69975
S-80787-Rev. A, 14-Apr-08
Vishay Siliconix
Si7174DP
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
75
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
76
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 11
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
2.5
4.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 75 V, VGS = 0 V
1
µA
VDS = 75 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 10 V, VGS = 10 V
40
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 10 A
0.0057
0.007
Ω
Forward Transconductancea
gfs
VDS = 15 V, ID = 10 A
34
S
Dynamicb
Input Capacitance
Ciss
VDS = 40 V, VGS = 0 V, f = 1 MHz
2770
pF
Output Capacitance
Coss
345
Reverse Transfer Capacitance
Crss
140
Total Gate Charge
Qg
VDS = 40 V, VGS = 10 V, ID = 10 A
47.5
72
nC
Gate-Source Charge
Qgs
13.8
Gate-Drain Charge
Qgd
14.4
Gate Resistance
Rg
f = 1 MHz
0.3
1.2
2.4
Ω
Turn-On Delay Time
td(on)
VDD = 40 V, RL = 10 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
16
30
ns
Rise Time
tr
11
22
Turn-Off Delay Time
td(off)
28
50
Fall Time
tf
918
Turn-On Delay Time
td(on)
VDD = 40 V, RL = 10 Ω
ID ≅ 10 A, VGEN = 8 V, Rg = 6 Ω
21
40
Rise Time
tr
11
22
Turn-Off Delay Time
td(off)
38
70
Fall Time
tf
12
24
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
60
A
Pulse Diode Forward Currenta
ISM
80
Body Diode Voltage
VSD
IS = 4 A
0.75
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
47
95
ns
Body Diode Reverse Recovery Charge
Qrr
103
210
nC
Reverse Recovery Fall Time
ta
36
ns
Reverse Recovery Rise Time
tb
11


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