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SI6562CDQ-T1-GE3 Scheda tecnica(PDF) 10 Page - Vishay Siliconix |
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SI6562CDQ-T1-GE3 Scheda tecnica(HTML) 10 Page - Vishay Siliconix |
10 / 17 page www.vishay.com 10 Document Number: 68954 S-82575-Rev. A, 27-Oct-08 Vishay Siliconix Si6562CDQ New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 4 6 8 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating 0.0 0.3 0.6 0.9 1.2 1.5 1.8 25 50 75 100 125 150 TC - Case Temperature (°C) |
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