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SI6562CDQ-T1-GE3 Scheda tecnica(PDF) 10 Page - Vishay Siliconix

Il numero della parte SI6562CDQ-T1-GE3
Spiegazioni elettronici  N- and P-Channel 20-V (D-S) MOSFETs
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Produttore elettronici  VISHAY [Vishay Siliconix]
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Document Number: 68954
S-82575-Rev. A, 27-Oct-08
Vishay Siliconix
Si6562CDQ
New Product
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
0.0
0.3
0.6
0.9
1.2
1.5
1.8
25
50
75
100
125
150
TC - Case Temperature (°C)


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