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SI5504BDC-T1-E3 Scheda tecnica(PDF) 11 Page - Vishay Siliconix

Il numero della parte SI5504BDC-T1-E3
Spiegazioni elettronici  N- and P-Channel 30 V (D-S) MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Document Number: 74483
S10-0547-Rev. B, 08-Mar-10
www.vishay.com
11
Vishay Siliconix
Si5504BDC
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74483.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-3
10-2
0
0
6
0
1
1
10-1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 100 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3
10-2
0
1
1
10-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)


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