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SI4914BDY-T1-GE3 Scheda tecnica(PDF) 8 Page - Vishay Siliconix |
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SI4914BDY-T1-GE3 Scheda tecnica(HTML) 8 Page - Vishay Siliconix |
8 / 15 page www.vishay.com 8 Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Vishay Siliconix Si4914BDY CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 10 20 30 40 50 0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 5 V 3 V 4 V 0.010 0.016 0.022 0.028 0.034 0.040 0 10203040 50 ID - Drain Current (A) VGS =4.5 V VGS =10 V 0 2 4 6 8 10 0 3.4 6.8 10.2 13.6 17.0 ID = 8 A Qg - Total Gate Charge (nC) VDS =10 V VDS =15 V VDS =20 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 0.4 0.8 1.2 1.6 2.0 01.2 2.4 3.6 4.8 6.0 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = - 55 °C TJ = 125 °C Crss 0 240 480 720 960 1200 0 6 12 18 24 30 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) ID =7.5 A VGS =10 V VGS =4.5 V |
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