Motore di ricerca datesheet componenti elettronici |
|
SI4866BDY-T1-E3 Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
|
SI4866BDY-T1-E3 Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 70341 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 3 Vishay Siliconix Si4866BDY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 1 V VDS - Drain-to-Source Voltage (V) 1.5 V 0.0040 0.0045 0.0050 0.0055 0.0060 0.0065 0 1020304050 ID - Drain Current (A) VGS = 4.5 V VGS = 2.5 V VGS = 1.8 V 0.0 0.9 1.8 2.7 3.6 4.5 0 1122334455 ID = 10 A Qg - Total Gate Charge (nC) VDS = 4 V VDS = 6 V VDS = 8 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.3 0.6 0.9 1.2 1.5 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) 0 1400 2800 4200 5600 7000 0246 8 10 12 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 ID = 12 A TJ - Junction Temperature (°C) VGS = 1.8 V VGS = 4.5 V |
Codice articolo simile - SI4866BDY-T1-E3 |
|
Descrizione simile - SI4866BDY-T1-E3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |