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SI4830CDY-T1-E3 Scheda tecnica(PDF) 7 Page - Vishay Siliconix

Il numero della parte SI4830CDY-T1-E3
Spiegazioni elettronici  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Produttore elettronici  VISHAY [Vishay Siliconix]
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Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
7
Vishay Siliconix
Si4830CDY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3
10-2
1
10
1000
10-1
10-4
100
0.2
0.1
Square WavePulse Duration (s)
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 110 °C/W
3. TJM -TA =PDMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3
10-2
0
1
1
10-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
1
0.1
0.01
0.05
0.02
Single Pulse


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