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SI4622DY-T1-E3 Scheda tecnica(PDF) 8 Page - Vishay Siliconix |
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SI4622DY-T1-E3 Scheda tecnica(HTML) 8 Page - Vishay Siliconix |
8 / 15 page www.vishay.com 8 Document Number: 68695 S09-0764-Rev. B, 04-May-09 Vishay Siliconix Si4622DY New Product CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 6 12 18 24 30 01 2 3 45 VDS - Drain-to-Source Voltage (V) VGS =10 V thru 4 V VGS =3 V VGS =2 V 0.015 0.020 0.025 0.030 0.035 0 5 10 15 20 25 30 ID - Drain Current (A) VGS =4.5 V VGS =10 V 0 2 4 6 8 10 024 6 8 10 12 14 Qg - Total Gate Charge (nC) VDS =15 V VDS =24 V ID =6.7 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 0 200 400 600 800 1000 0 6 12 18 24 30 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =10 V,ID =6.7 A VGS =4.5 V,ID =6.4 A |
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