SI4501BDY-T1-GE3 datasheet(2/15 Pages) VISHAY

Il numero della parte	SI4501BDY-T1-GE3

Spiegazioni elettronici	Complementary (N- and P-Channel) MOSFET

Download	15 Pages

Scroll/Zoom	100%

Produttore elettronici	VISHAY [Vishay Siliconix]

Homepage	http://www.vishay.com

Logo

2 / 15 page

www.vishay.com

2

Document Number: 67441

S11-0245-Rev. A, 14-Feb-11

Vishay Siliconix

Si4501BDY

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

30

V

VGS = 0 V, ID = - 250 µA

P-Ch

- 8

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

N-Ch

34

mV/°C

ID = - 250 µA

P-Ch

- 3

VGS(th) Temperature Coefficient

V

GS(th)/TJ

ID = 250 µA

N-Ch

- 4.5

ID = - 250 µA

P-Ch

2.6

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.8

2

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.45

- 0.9

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch

± 100

nA

VDS = 0 V, VGS = ± 8 V

P-Ch

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

N-Ch

1

µA

VDS = - 8 V, VGS = 0 V

P-Ch

- 1

VDS = 30 V, VGS = 0 V, TJ = 55 °C

N-Ch

5

VDS = - 8 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 5

On-State Drain Currentb

ID(on)

VDS =5 V, VGS = 10 V

N-Ch

20

A

VDS =- 5 V, VGS = - 4.5 V

P-Ch

- 20

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 10 A

N-Ch

0.0135

0.017



VGS = - 4.5 V, ID = - 6 A

P-Ch

0.021

0.027

VGS = 4.5 V, ID = 7 A

N-Ch

0.016

0.020

VGS = - 2.5 V, ID = - 5 A

P-Ch

0.029

0.037

Forward Transconductanceb

gfs

VDS = 15 V, ID = 10 A

N-Ch

29

S

VDS = - 15 V, ID = - 6 A

P-Ch

24

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 15 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 4 V, VGS = 0 V, f = 1 MHz

N-Ch

805

pF

P-Ch

1400

Output Capacitance

Coss

N-Ch

170

P-Ch

660

Reverse Transfer Capacitance

Crss

N-Ch

80

P-Ch

630

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 10 A

N-Ch

16.5

25

nC

VDS = - 4 V, VGS = - 8 V, ID = - 6 A

P-Ch

27.5

42

N-Channel

VDS = 15 V, VGS = 4.5 V, ID = 10 A

P-Channel

VDS = - 4 V, VGS = - 4.5 V, ID = - -6 A

N-Ch

7.9

12

P-Ch

16.5

25

Gate-Source Charge

Qgs

N-Ch

2.2

P-Ch

2.2

Gate-Drain Charge

Qgd

N-Ch

2.7

P-Ch

4.8

Gate Resistance

Rg

f = 1 MHz

N-Ch

0.3

1.1

2.2



P-Ch

0.9

4.2

8.4

Codice articolo simile - SI4501BDY-T1-GE3

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Vishay Siliconix	SI4501BDY-T1-GE3	251Kb / 14P	Complementary (N- and P-Channel) MOSFET 01-Jan-2022

More results

Descrizione simile - SI4501BDY-T1-GE3

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Vishay Siliconix	SI4501ADY	137Kb / 9P	Complementary (N- and P-Channel) MOSFET 01-Jan-2022
Vishay Telefunken	SI4501BD	279Kb / 15P	Complementary (N- and P-Channel) MOSFET
Vishay Siliconix	SI4501BDY	251Kb / 14P	Complementary (N- and P-Channel) MOSFET 01-Jan-2022
Advanced Linear Devices	ALD1115	66Kb / 6P	COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
Advanced Linear Devices	ALD1115	85Kb / 8P	COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
ADL Embedded Solutions	ALD1115	70Kb / 8P	COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET 2021
Will Semiconductor Ltd.	WCM4616	2Mb / 9P	N- and P-Channel Complementary, 20V,MOSFET
	WCM2068	1Mb / 11P	N- and P-Channel Complementary, 20V,MOSFET
	WCM2070	1Mb / 11P	N- and P-Channel Complementary, 12V,MOSFET
	WCM2079	914Kb / 8P	N- and P-Channel Complementary, 20V,MOSFET

More results

SI4501BDY-T1-GE3 Scheda tecnica(PDF) 2 Page - Vishay Siliconix

SI4501BDY-T1-GE3 Scheda tecnica(HTML) 2 Page - Vishay Siliconix

Codice articolo simile - SI4501BDY-T1-GE3

Descrizione simile - SI4501BDY-T1-GE3

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Scheda tecnica Scarica

Link URL