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SI4483ADY Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI4483ADY Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 4 page 2 Vishay Siliconix SPICE Device Model Si4483ADY www.vishay.com Document Number: 64645 S-82897-Rev. A, 15-Dec-08 SPECIFICATIONS (T J = 25 °C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage V GS(th) V DS = VGS, ID = - 250 μA 2 V V GS = - 10 V, ID = - 10 A 0.0070 0.0073 Drain-Source On-State Resistance a R DS(on) V GS = - 4.5 V, ID = - 7 A 0.0141 0.0127 Ω Forward Transconductance a g fs V DS = - 10 V, ID = - 10 A 28 32 S Diode Forward Voltage V SD I S = - 3 A - 0.72 - 0.72 V Dynamic b Input Capacitance C iss 3860 3900 Output Capacitance C oss 711 715 Reverse Transfer Capacitance C rss V DS = - 15 V, VGS = 0 V, f = 1 MHz 640 645 pF V DS = - 15 V, VGS = - 10 V, ID = - 10 A 81 90 Total Gate Charge Q g 44 44.8 Gate-Source Charge Q gs 12.2 12.2 Gate-Drain Charge Q gd V DS = - 15 V, VGS = - 4.5 V, ID = - 10 A 21.7 21.7 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. |
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