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SI4286DY-T1-GE3 Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI4286DY-T1-GE3 Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4286DY Document Number: 67599 S11-1151-Rev. A, 13-Jun-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual N-Channel 40 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter - External HDD - Notebook System Power • LCD Display Backlighting PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a Qg (Typ.) 40 0.0325 at VGS = 10 V 7 3.3 nC 0.040 at VGS = 4.5 V 6.3 D1 G1 D1 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 S1 S2 Ordering Information: Si4286DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 7 A TC = 70 °C 5.6 TA = 25 °C 5.7b, c TA = 70 °C 4.6b, c Pulsed Drain Current (t = 300 µs) IDM 20 Continuous Source-Drain Diode Current TC = 25 °C IS 2.4 TA = 25 °C 1.6b, c Single Pulse Avalanche Current L = 0.1 mH IAS 8 Single Pulse Avalanche Energy EAS 3.2 mJ Maximum Power Dissipation TC = 25 °C PD 2.9 W TC = 70 °C 1.86 TA = 25 °C 1.9b, c TA = 70 °C 1.23b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 10 s RthJA 55 65 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 35 43 |
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