SI4276DY datasheet(8/15 Pages) VISHAY

Il numero della parte	SI4276DY

Spiegazioni elettronici	Dual N-Channel 30 V (D-S) MOSFET

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Document Number: 66599

S10-1289-Rev. A, 31-May-10

Vishay Siliconix

Si4276DY

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

VGS = 10 V thru 4 V

VGS =3V

VDS - Drain-to-Source Voltage (V)

0.000

0.015

0.030

0.045

0.060

0

5

10

15

20

25

30

VGS =10V

VGS =4.5 V

ID - Drain Current (A)

0

2

4

6

8

10

024

6

8

ID =6.8 A

VDS =7.5 V

VDS =24V

VDS =15V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

0.0

0.6

1.2

1.8

2.4

3.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

0

100

200

300

400

500

0

6

12

18

24

30

Ciss

Coss

Crss

VDS - Drain-to-Source Voltage (V)

0.7

0.9

1.1

1.3

1.5

1.7

- 50

- 25

0

25

50

75

100

125

150

VGS =4.5 V

ID =6.1 A

VGS =10V; ID =6.8 A

TJ - Junction Temperature (°C)

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