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SI4228DY Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI4228DY Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4228DY New Product Document Number: 66591 S10-1043-Rev. A, 03-May-10 www.vishay.com 1 Dual N-Channel 25 V (D-S) MOSFET # PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) a, e Qg (Typ.) 25 0.018 at VGS = 10 V 8 7.8 nC 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 Ordering Information: Si4228DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 D1 G1 S1 N-Channel MOSFET D2 G2 S2 N-Channel MOSFET Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W. e. Package limited. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 8e A TC = 70 °C 8e TA = 25 °C 8b, c, e TA = 70 °C 6.9b, c Pulsed Drain Current IDM 50 Continuous Source-Drain Diode Current TC = 25 °C IS 2.6 TA = 25 °C 1.7b, c Single Pulse Avalanche Current L = 0.1 mH IAS 15 Avalanche Energy EAS 11.25 mJ Maximum Power Dissipation TC = 25 °C PD 3.1 W TC = 70 °C 2 TA = 25 °C 2b, c TA = 70 °C 1.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 52 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Synchronous Buck Converter • DC/DC Converter |
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