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SI4124DY Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI4124DY Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 68601 S09-0392-Rev. B, 09-Mar-09 www.vishay.com 3 Vishay Siliconix Si4124DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 VGS =3 V V DS - Drain-to-Source Voltage (V) VGS = 10 V thru 4 V 0.000 0.002 0.004 0.006 0.008 0.010 0 10203040 50 VGS =10 V VGS =4.5 V I D - Drain Current (A) 0 2 4 6 8 10 0 11223344 55 ID =16A VDS = 30 V VDS =20 V VDS = 10 V Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 012 34 TC = 25 °C TC = 125 °C TC = - 55 °C V GS - Gate-to-Source Voltage (V) 0 800 1600 2400 3200 4000 010 20 30 40 V DS - Drain-to-Source Voltage (V) Ciss Coss Crss 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 25 50 75 100 125 150 VGS =10 V ID =14A VGS =4.5 V T J - Junction Temperature (°C) |
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