SI4110DY-T1-GE3 datasheet(4/10 Pages) VISHAY

Il numero della parte	SI4110DY-T1-GE3

Spiegazioni elettronici	N-Channel 80-V (D-S) MOSFET

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Document Number: 68766

S-81713-Rev. A, 04-Aug-08

Vishay Siliconix

Si4110DY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.0

0.20.4

0.60.8

1.0

1.2

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

TJ = 25 °C

0

1

2

3

4

5

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0

0.01

0.02

0.03

0.04

4567

8

910

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

0

30

60

90

120

150

10

1

0.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

0.1

TA =25 °C

Single Pulse

Limited byRDS(on)*

BVDSS Limited

10 ms

1ms

100 µs

100 ms

1s

10 s

DC

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