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SI3850ADV Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI3850ADV Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 73789 S09-2110-Rev. B, 12-Oct-09 Vishay Siliconix Si3850ADV N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.01 0.1 0.0 0.3 0.6 0.9 1.2 1.5 1 10 VSD - Source-to-Drain Voltage (V) 25 °C 0.001 150 °C TJ - Temperature (°C) - 0.4 - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VGS - Gate-to-Source Voltage (V) 0.0 0.3 0.6 0.9 1.2 1.5 012345 25 °C 125 °C Time (s) 1 10 0.1 0.01 0.001 0 6 12 18 24 30 Safe Operating Area TA = 25 °C Single Pulse DC 0.01 0.1 1 10 0.1 1 10 100 1 s, 10 s 100 ms 10 ms 1 ms Limited by R * DS(on) BVDSS Limited VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
Codice articolo simile - SI3850ADV_09 |
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Descrizione simile - SI3850ADV_09 |
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