Motore di ricerca datesheet componenti elettronici |
|
SI3590DV Scheda tecnica(PDF) 7 Page - Vishay Siliconix |
|
SI3590DV Scheda tecnica(HTML) 7 Page - Vishay Siliconix |
7 / 13 page Document Number: 72032 S09-1927-Rev. C, 28-Sep-09 www.vishay.com 7 Vishay Siliconix Si3590DV P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted Source-Drain Diode Forward Voltage Threshold Voltage 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.1 0.2 0.3 0.4 0.5 012 34 567 VGS - Gate-to-Source Voltage (V) ID = 2 A 0.01 0 1 6 8 2 4 10 30 0.1 Time (s) Safe Operating Area, Junction-to-Case 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 TC = 25 °C Single Pulse 10 ms 100 ms DC 100 µs IDM Limited ID(on) Limited BVDSS Limited 10 s, 1 s VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* |
Codice articolo simile - SI3590DV |
|
Descrizione simile - SI3590DV |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |