SI3585CDV datasheet(7/16 Pages) VISHAY

Il numero della parte	SI3585CDV

Spiegazioni elettronici	N- and P-Channel 20 V (D-S) MOSFET

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Document Number: 67470

S11-0613-Rev. A, 04-Apr-11

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7

Vishay Siliconix

Si3585CDV

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3

10-2

1

10

1000

10-1

10-4

100

0.2

0.1

Square Wave Pulse Duration (s)

1

0.1

0.01

t1

t2

Notes:

PDM

1. Duty Cycle, D =

2. Per Unit Base = RthJA =150 °C/W

3. TJM -TA =PDMZthJA(t)

t1

t2

4. Surface Mounted

Duty Cycle = 0.5

Single Pulse

0.02

0.05

Normalized Thermal Transient Impedance, Junction-to-Foot

10-3

10-2

0

1

10-1

10-4

0.2

0.1

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1

0.1

0.01

0.05

Single Pulse

0.02

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