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SI2325DS Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI2325DS Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si2325DS SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 3.2 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −10 V 4.9 A VGS = −10 V, ID = −0.5 A 1 1 Drain-Source On-State Resistance a rDS(on) VGS = −6 V, ID = −0.3 A 1.05 1.05 Ω Forward Transconductance a gfs VDS = −15 V, ID = −0.5 A 1.3 2.2 S Diode Forward Voltage a VSD IS = −1 A, VGS = 0 V −0.78 −0.70 V Dynamic b Total Gate Charge Qg 7 7.7 Gate-Source Charge Qgs 1.5 1.5 Gate-Drain Charge Qgd VDS = −75 V, VGS = −10 V, ID = −0.5 A 2.5 2.5 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 71967 S-60260 Rev. A, 27-Feb-06 |
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