SI1958DH datasheet(3/7 Pages) VISHAY

Il numero della parte	SI1958DH

Spiegazioni elettronici	Dual N-Channel 20 V (D-S) MOSFET

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Document Number: 74340

S10-0792-Rev. C, 05-Apr-10

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Vishay Siliconix

Si1958DH

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

1

2

3

4

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 V thru 3.5 V

VDS - Drain-to-Source Voltage (V)

VGS = 3 V

VGS = 2 V

VGS = 1.5 V

VGS = 2.5 V

0.0

0.1

0.2

0.3

0.4

0.5

012

34

VGS = 2.5 V

ID - Drain Current (A)

VGS = 4.5 V

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

ID = 1.5 A

Qg - Total Gate Charge (nC)

VDS = 10 V

VDS = 16 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = - 55 °C

TC = 125 °C

0

40

80

120

160

0

4

8

121620

Crss

VDS - Drain-Source Voltage (V)

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS = 4.5 V, 2.5 V

ID = 1.3 A

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