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SI1426DH Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI1426DH Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si1426DH SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 V On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 73 A VGS = 10 V, ID = 3.6 A 0.059 0.061 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 2 A 0.088 0.092 Ω Forward Transconductance a gfs VDS = 10 V, ID = 3.6 A 5.7 5 S Diode Forward Voltage a VSD IS = 1.3 A, VGS = 0 V 0.79 0.78 V Dynamic b Total Gate Charge Qg 1.9 1.9 Gate-Source Charge Qgs 0.75 0.75 Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 3.6 A 0.75 0.75 nC Turn-On Delay Time td(on) 6 10 Rise Time tr 9 12 Turn-Off Delay Time td(off) 12 15 Fall Time tf VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 16 9 Ns Source-Drain Reverse Recovery Time trr IF = 1.3 A, di/dt = 100 A/µs 23 40 Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 70557 S-50151 Rev. B, 07-Feb-05 |
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