SI1413EDH datasheet(2/4 Pages) VISHAY

Il numero della parte	SI1413EDH

Spiegazioni elettronici	P-Channel 20-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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SPICE Device Model Si1413EDH

Document Number: 71502

S-51305

⎯Rev. C, 27-Jul-05

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 μA

0.80

V

On-State Drain Current

a

ID(on)

VDS = −5 V, VGS = −4.5 V

36

A

VGS = −4.5 V, ID = −2.9 A

0.098

0.095

VGS = −2.5 V, ID = −2.4 A

0.132

0.125

Drain-Source On-State Resistance

a

rDS(on)

VGS = −1.8 V, ID = −1.0 A

0.178

0.180

Ω

Forward Transconductance

a

gfs

VDS = −10 V, ID = −2.9 A

6.7

6

S

Diode Forward Voltagve

a

VSD

IS = −1.4 A, VGS = 0 V

−0.80

V

Dynamic

b

Total Gate Charge

b

Qg

5.6

Gate-Source Charge

b

Qgs

1.2

Gate-Drain Charge

b

Qgd

VDS = −10 V, VGS = −4.5 V, ID = −2.9 A

1.2

nC

Turn-On Delay Time

b

td(on)

1.1

0.75

Rise Time

b

tr

2.9

1.6

Turn-Off Delay Time

b

td(off)

9.3

3.9

Fall Time

b

tf

VDD = −10 V, RL = 10 Ω

ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω

15

3.9

ns

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

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