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SI1401EDH Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI1401EDH Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com 4 Document Number: 70080 S10-1537-Rev. A, 19-Jul-10 Vishay Siliconix Si1401EDH New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Threshold Voltage T J - Junction Temperature (°C) 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 VGS =- 2.5 V; I D =- 4.8 A VGS =- 4.5 V; ID =- 5.5 A 0.00 12 4 35 0.09 0.06 0.03 0.12 VGS - Gate-to-Source Voltage (V) I D = 5.5 A T J = 25 °C T J = 125 °C 0.20 - 50 - 25 25 75 125 0 50 100 150 0.35 0.65 0.50 0.80 T J - Junction Temperature (°C) I D = - 250 μA Source-Drain Diode Forward Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.001 0.0 0.2 0.6 1.0 0.4 0.8 1.2 0.01 1 0.1 10 100 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = - 50 °C T J = 25 °C 0 0.001 0.01 0.1 1 10 6 12 18 24 30 Time (s) 0.01 0.1 1 100 10 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Limited by R DS(on)* BVDSS Limited T A = 25 °C Single Pulse 1 ms 10 ms 1 s 10 s 100 ms 100 μs DC |
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