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MJE800T Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE800T Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJE800T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=1.5A; IB=40mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=40mA B 3.0 V VBE(on)-1 Base-Emitter On Voltage IC=1.5A; VCE=3V 2.5 V VBE(on)-2 Base-Emitter On Voltage IC= 4A; VCE= 3V 3.0 V ICEO Collector Cutoff Current VCE= 60V; IB= 0 0.1 mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 VCB= 60V; IE= 0;TC= 100℃ 0.1 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC=1.5A ; VCE= 3V 750 hFE-2 DC Current Gain IC= 4A ; VCE= 3V 100 isc Website:www.iscsemi.cn |
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