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MJE800T Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte MJE800T
Spiegazioni elettronici  isc Silicon NPN Darlington Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
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MJE800T Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
MJE800T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
60
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC=1.5A; IB=40mA
2.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB=40mA
B
3.0
V
VBE(on)-1
Base-Emitter On Voltage
IC=1.5A; VCE=3V
2.5
V
VBE(on)-2
Base-Emitter On Voltage
IC= 4A; VCE= 3V
3.0
V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
0.1
mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
VCB= 60V; IE= 0;TC= 100℃
0.1
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.0
mA
hFE-1
DC Current Gain
IC=1.5A ; VCE= 3V
750
hFE-2
DC Current Gain
IC= 4A ; VCE= 3V
100
isc Website:www.iscsemi.cn


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