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BDX66 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDX66 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors BDX66 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0;L=25mH -60 V VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-40mA -2 V ICBO Collector cut-off current VCB=-40V; IE=0 TC=150℃ -1 -5 mA ICEO Collector cut-off current VCE=-30V; IB=0 -3 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 mA Switching times ton Turn-on time 1.0 μs toff Turn-off time IC=-10A ; IB1=-IB2=0.04A VCC=12V ; 3.5 μs |
Codice articolo simile - BDX66 |
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Descrizione simile - BDX66 |
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